Title:
【発明の名称】半導体チップ上でより高い電圧をスイッチングするための回路装置の作動方法
Document Type and Number:
Japanese Patent JP3067805
Kind Code:
B2
Abstract:
A method for switching high positive or negative voltages to an output terminal of a circuit configuration includes connecting a series circuit of a first p-channel transistor and a first n-channel transistor between terminals for the two voltages. Gates of the two transistors are connected through load paths of transistors of the other respective conduction type to first and third input terminals. Gates of the transistors of the other conduction type are respectively connected to second and fourth input terminals. The first p-channel transistor and the first n-channel transistor can each be locked through load paths of transistors of the same conduction type which are connected between their gate terminals and the respective terminals for the high positive and high negative potential, and the gates of the transistors of the same conduction type are connected to the output terminal. Either the high positive potential or the high negative potential can be switched through to the output terminal depending on the potential at the input terminals.
Inventors:
Winnelle, Joseph
Application Number:
JP52135896A
Publication Date:
July 24, 2000
Filing Date:
December 15, 1995
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
H03K3/356; H03K17/10; H03K17/687; H03K19/094; (IPC1-7): H03K17/10
Domestic Patent References:
| JP4211515A |
Other References:
【文献】米国特許5266848(US,A)
Attorney, Agent or Firm:
Iwao Yamaguchi