【発明の名称】プラズマCVD薄膜製造装置及び製膜方法

Title:

【発明の名称】プラズマCVD薄膜製造装置及び製膜方法

Document Type and Number:

Japanese Patent JP3068612

Kind Code:

B1

Abstract:

PROBLEM TO BE SOLVED: To obtain a uniform film distribution without depending on the film forming rate. SOLUTION: This plasma CVD thin film producing device is provided with a vacuum vessel 31, a gas introducing tube 41 introducing gas into the vacuum vessel 31, an exhaust tube 42 exhausting the inside of the vacuum vessel 31, a heater 32 for substrate heating arranged in the vacuum vessel 31 and supporting a substrate 38, an electrode 34 for discharge arranged so as to be confronted with the substrate 38 in the vacuum vessel 31, a power source switching apparatus 37 connected to the electrode 34 for discharge, two or more power sources 35a and 35b for discharge connected to the power source switching apparatus 37 and having different frequency and a heater 40 for the surface to be film-formed disposed between the heater 32 for substrate heating and the power sources 35a and 35b for discharge.

Inventors:

Tatsufumi Aoi
Yasuhiro Yamauchi
Hideo Yamakoshi
Yoshiaki Takeuchi

Application Number:

JP18161999A

Publication Date:

July 24, 2000

Filing Date:

June 28, 1999

Export Citation:

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