Title:
半導体装置
Document Type and Number:
Japanese Patent JP3141688
Kind Code:
U
Abstract:
A semiconductor device includes: a first semiconductor region of a first conductive type; a second semiconductor region of the first conductive type formed on an upper surface of the first semiconductor region and having a lower impurity concentration than that of the first semiconductor region; a third semiconductor region of the first conductive type formed on the upper surface of the first semiconductor region and having a higher impurity concentration than that of the second semiconductor region; and a fourth semiconductor region of a second conductive type different from the first conductive type formed on upper surfaces of the second semiconductor region and the third semiconductor region. A PN junction is formed between the second semiconductor region and third semiconductor region and the fourth semiconductor region. The second semiconductor region is formed to surround the third semiconductor region.
Inventors:
Shinji Kudo
Ryu Hirata
Shinzo Miyazono
Ryu Hirata
Shinzo Miyazono
Application Number:
JP2008001148U
Publication Date:
May 22, 2008
Filing Date:
February 29, 2008
Export Citation:
Assignee:
Sanken Electric Co., Ltd.
International Classes:
H01L29/861