Title:
【発明の名称】薄膜非晶質半導体装置
Document Type and Number:
Japanese Patent JP3150681
Kind Code:
B2
Abstract:
PURPOSE:To reduce the deterioration of electric characteristics caused by light by a method wherein amorphous silicon system semiconductor is used which is stabilized by intermittently projecting light including visible rays of high illuminance, under a high temperature atmosphere at 150 deg.C or more. CONSTITUTION:By sputtering or reactive sputtering wherein silicon or silicon system compound is used as target, a silicon system amorphous semiconductor thin film is formed. Then by intermittently projecting light including visible rays of high illuminance under a high temperature atmosphere at 150 deg.C or more, a stabilized amorphous silicon system semiconductor device is obtained. Irradiation pulse light of 10W/cm or more, or preferably 100W/cm or more is used. Irradiation time of one pulse is ordinarily 1/10sec or less. The pulse light is ordinarily visible rays or ultraviolet rays. Since this a-Si system semiconductor device is stable for light, it can be used for a solar cell and a photo sensor.
Inventors:
Hideo Yamagishi
William Andrew Nevin
Hitoshi Nishio
Keiko Miki
Kazunaga Tsushita
Yoshihisa Ohwada
William Andrew Nevin
Hitoshi Nishio
Keiko Miki
Kazunaga Tsushita
Yoshihisa Ohwada
Application Number:
JP25567889A
Publication Date:
March 26, 2001
Filing Date:
September 29, 1989
Export Citation:
Assignee:
Kanegafuchi Chemical Industry Co., Ltd.
International Classes:
H01L21/205; H01L21/26; H01L31/04; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JP6314420A | ||||
| JP5799729A |
Attorney, Agent or Firm:
Sota Asahina (2 outside)