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Title:
【発明の名称】オーミックコンタクト及びオーミックコンタクトを有する光電池の製造方法
Document Type and Number:
Japanese Patent JP3303975
Kind Code:
B2
Abstract:
Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of the semiconductor, substantially free of oxide groups, heating to form a dried layer, removing the dried layer, washing the surface to remove residual by-products and drying the surface.

Inventors:
Johnson, daniel robert
Octic, Scener
Ozsan, Mehmet Ershin
Paterson, Michael Holmes
Application Number:
JP50828493A
Publication Date:
July 22, 2002
Filing Date:
November 06, 1992
Export Citation:
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Assignee:
BP Solar Limited
International Classes:
H01L21/445; H01L31/0224; H01L21/28; H01L31/04; H01L31/18; (IPC1-7): H01L21/28; H01L31/04
Domestic Patent References:
JP621495A
JP1181477A
JP1168073A
JP63299176A
JP63252427A
JP6325918A
JP61222180A
JP6070724A
JP55102279A
JP53138289A
Attorney, Agent or Firm:
Haruo Hamada