Title:
【発明の名称】多結晶シリコンロッドおよびその製造方法
Document Type and Number:
Japanese Patent JP3357675
Kind Code:
B2
Abstract:
PCT No. PCT/JP97/01674 Sec. 371 Date Jan. 20, 1998 Sec. 102(e) Date Jan. 20, 1998 PCT Filed May 19, 1997 PCT Pub. No. WO97/44277 PCT Pub. Date Nov. 27, 1997A polycrystal silicon rod characterized in that it has a half value width of a peak indicative of crystal orientation (111) of an X-ray diffraction pattern, of 0.3 DEG or less, an internal strain rate in a radial direction of less than 5.0x10-5 cm-1 and an internal iron concentration of 0.5 ppba or less. The above polycrystal silicon rod having high crystallinity, high purity and low internal strain is produced by heating a core material in a gaseous atmosphere comprising trichlorosilane and hydrogen to deposit silicon on the silicon core material to produce a polycrystal silicon rod, and subjecting the polycrystal silicon rod to a heat treatment without allowing it to contact with the air, to remove strain contained therein.
Inventors:
Junichi Kubota
Kaiyuki Oda
Kaiyuki Oda
Application Number:
JP54199597A
Publication Date:
December 16, 2002
Filing Date:
May 19, 1997
Export Citation:
Assignee:
Tokuyama Corporation
International Classes:
C01B33/035; C30B25/00; (IPC1-7): C01B33/035; C30B29/06
Domestic Patent References:
| JP3150288A | ||||
| JP6172093A | ||||
| JP7277874A | ||||
| JP867510A |
Attorney, Agent or Firm:
Masataka Oshima