Title:
【発明の名称】絶縁ゲート型半導体素子
Document Type and Number:
Japanese Patent JP3367747
Kind Code:
B2
Inventors:
Mitsuhiko Kitagawa
Akio Nakagawa
Norio Yasuhara
Tomoki Inoue
Akio Nakagawa
Norio Yasuhara
Tomoki Inoue
Application Number:
JP7015194A
Publication Date:
January 20, 2003
Filing Date:
March 15, 1994
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L21/336; H01L29/739; H01L29/786; (IPC1-7): H01L29/78; H01L29/786
Domestic Patent References:
| JP541515A |
Other References:
【文献】特許2950688(JP,B2)
Attorney, Agent or Firm:
Takehiko Suzue