Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3374568
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor device of a structure wherein an increase in a capacitor capacitance is further contrived, and a method capable of manufacturing easily the device of that structure. CONSTITUTION: This semiconductor device is a semiconductor device, such as a DRAM, having a storage node electrode 37, a plate electrode 40 and an insulating film 38 for capacitor, which is interposed between these of the electrodes 37 and 40. The electrode 37 has conductive ring-shaped inner electrodes 22 and conductive ring-shaped outer electrodes 36. A first insulating film is formed on a lower conductive layer 10, an aperture is formed fn the first insulating film and a first conductive sidewall 22 is formed on the inner periphery of the aperture. The first insulating film is removed, a second insulating film 28, which covers the inside and outside of the sidewall 22 and has the outer peripheral wall surface etched at the outer peripheral position at a prescribed distance from the sidewall 22, is formed and a second conductive sidewall 36 is formed on the outer peripheral wall surface of the film 28. After that, the film 28 is removed.
Inventors:
Hideto Kajiyama
Application Number:
JP150195A
Publication Date:
February 04, 2003
Filing Date:
January 09, 1995
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L27/04; H01L21/265; H01L21/822; H01L21/8242; H01L27/108; (IPC1-7): H01L21/822; H01L21/265; H01L21/8242; H01L27/04; H01L27/108
Domestic Patent References:
| JP5218343A | ||||
| JP677430A | ||||
| JP6169068A | ||||
| JP7211798A |
Attorney, Agent or Firm:
Takahisa Sato