Title:
電子部品及びその製造方法
Document Type and Number:
Japanese Patent JP3576788
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an electronic parts having a dielectric material film which assures excellent fatigue characteristic and electric, characteristic and less amount of recess and projection at the surface. SOLUTION: In a method of manufacturing a ferro-dielectric material memory capacitor, an insulating film 2 is formed on a Si substrate 1, a Ti junction layer 3 is formed on this insulating film 2, a Pt electrode 4 which will become a base electrode is formed on this Ti junction layer and a PZT film 5 is then formed thereon. This PZT film 5 is composed of two layers of a seed layer 5a and the PZT film 5 body formed thereon. Moreover, the Pt electrode 6 is formed on this PZT film 5 and these layers form a ferro-dielectric material memory capacitor.
Inventors:
Koji Yamakawa
Osamu Arisumi
Osamu Arisumi
Application Number:
JP3165898A
Publication Date:
October 13, 2004
Filing Date:
February 13, 1998
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8247; H01L21/316; H01L21/336; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; H01L37/02; H01L41/187; H01L41/29; H01L41/316; H01L41/319; H01L41/39; H01L41/43; (IPC1-7): H01L27/105; H01L21/316; H01L21/822; H01L21/8247; H01L27/04; H01L29/788; H01L29/792; H01L37/02; H01L41/187; H01L41/24
Domestic Patent References:
| JP5343345A | ||||
| JP6021338A | ||||
| JP8031951A | ||||
| JP10007495A | ||||
| JP5343642A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai