Title:
レーザー発振素子及びレーザー発振装置
Document Type and Number:
Japanese Patent JP3584450
Kind Code:
B2
Abstract:
In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.
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Inventors:
Hiroshi Shiomi
Yoshiki Nishibayashi
Shinichi Shikada
Yoshiki Nishibayashi
Shinichi Shikada
Application Number:
JP5920295A
Publication Date:
November 04, 2004
Filing Date:
March 17, 1995
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01S3/094; H01S3/06; H01S3/16; (IPC1-7): H01S3/16
Domestic Patent References:
| JP697540A | ||||
| JP6291404A | ||||
| JP513342A | ||||
| JP3227092A | ||||
| JP4333291A | ||||
| JP218980A | ||||
| JP484486A | ||||
| JP6216455A | ||||
| JP6474783A |
Other References:
Applied Physics Letters ,1994年,Vol.64 No.13,p.1668-1670
Applied Physics Letters ,1994年,Vol.65 No.8,p.992-994
Applied Physics Letters ,1986年,Vol.49 No.25,p.1686-1688
Applied Physics Letters ,1994年,Vol.65 No.8,p.992-994
Applied Physics Letters ,1986年,Vol.49 No.25,p.1686-1688
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada