Title:
受光素子およびその製造方法
Document Type and Number:
Japanese Patent JP3601761
Kind Code:
B2
Abstract:
A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and a light -shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion. The light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns.
Inventors:
Kenichi Matsuda
Application Number:
JP33006598A
Publication Date:
December 15, 2004
Filing Date:
November 19, 1998
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L31/10; H01L31/0216; H01L31/0224; H01L31/103; H01L31/105; H01L31/18; (IPC1-7): H01L31/10
Domestic Patent References:
| JP645569A | ||||
| JP5326917A | ||||
| JP2199876A | ||||
| JP964405A | ||||
| JP864855A | ||||
| JP3276769A | ||||
| JP1168144A |
Attorney, Agent or Firm:
Hidesaku Yamamoto