Title:
ケイ素誘導体又はケイ素を基材とした分離材料の層のための新規な化学機械的研磨方法
Document Type and Number:
Japanese Patent JP3612192
Kind Code:
B2
Abstract:
Chemical-mechanical polishing (CMP) of a silicon- or silicon compound-based insulating layer employs an abrasive cloth containing, as abrasive, an aqueous colloidal silica suspension comprising individual colloidal silica particles which are not bonded together by siloxane bonds and which are suspended in water. Also claimed is an abrasive for CMP of a silicon- or silicon compound-based insulating layer, the abrasive being a cloth impregnated with an aqueous colloidal silica suspension which contains individual 3-250 nm size colloidal silica particles, not bonded together by siloxane bonds, and which has pH 1.5-4.
Inventors:
Eric Jakino
Maurice Rivoire
Maurice Rivoire
Application Number:
JP30646797A
Publication Date:
January 19, 2005
Filing Date:
October 20, 1997
Export Citation:
Assignee:
Clariant International Limited
International Classes:
C09G1/02; C09K3/14; B24B37/00; H01L21/304; H01L21/3105; (IPC1-7): H01L21/304; B24B37/00
Domestic Patent References:
| JP8279480A | ||||
| JP8045934A | ||||
| JP9174419A | ||||
| JP8319111A | ||||
| JP7321119A | ||||
| JP2262956A |
Attorney, Agent or Firm:
Mitsuo Adachi
Nobuaki Kazehaya
Nobuaki Kazehaya