Title:
発光ダイオードおよびその製造方法
Document Type and Number:
Japanese Patent JP3616766
Kind Code:
B2
Abstract:
The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.
Inventors:
Ring Jin Ivan
Yang Quan Nun
Yang Quan Nun
Application Number:
JP2002051455A
Publication Date:
February 02, 2005
Filing Date:
February 27, 2002
Export Citation:
Assignee:
United Epitaxy Company,Ltd.
International Classes:
H01L21/205; H01L33/00; H01L33/06; H01L33/30; H01L33/38; (IPC1-7): H01L33/00; H01L21/205
Domestic Patent References:
| JP10294491A | ||||
| JP2002158373A |
Foreign References:
| US6287882 | ||||
| US5300788 |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda