Title:
太陽電池の製造方法
Document Type and Number:
Japanese Patent JP3616785
Kind Code:
B2
Abstract:
Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.
Inventors:
Akashi Nishida
Application Number:
JP24821796A
Publication Date:
February 02, 2005
Filing Date:
September 19, 1996
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L21/208; H01L31/04; H01L31/068; H01L31/18; (IPC1-7): H01L31/04; H01L21/208
Domestic Patent References:
| JP4311070A | ||||
| JP7211931A | ||||
| JP7221332A | ||||
| JP2181423A |
Other References:
T.H.Wang et al.,"Growth of silicon thin layers on cast MG-Si from metal solutions for solar cells",Solar Energy Materials and Solar Cells,1996年 6月,Volumes 41/42,p.19-30
P.O.Hansson et al.,"GROWTH OF HIGH QUALITY c-SiGe p-n DOUBLE LAYERS FOR HIGH-EFFICIENCY SOLAR CELLS",IEEE 1st World Conference on Photovoltaic Energy Conversion,1994年,Vol.2,p.1254-1257
G.F.Zheng et al.,"16.4% efficient, thin active layer silicon solar cell grown by liquid phase epitaxy",Solar Energy Materials and Solar Cells,Vol.40, pp.231-238 (July 1996)
P.O.Hansson et al.,"GROWTH OF HIGH QUALITY c-SiGe p-n DOUBLE LAYERS FOR HIGH-EFFICIENCY SOLAR CELLS",IEEE 1st World Conference on Photovoltaic Energy Conversion,1994年,Vol.2,p.1254-1257
G.F.Zheng et al.,"16.4% efficient, thin active layer silicon solar cell grown by liquid phase epitaxy",Solar Energy Materials and Solar Cells,Vol.40, pp.231-238 (July 1996)
Attorney, Agent or Firm:
Hisao Fukumori