To reduce the area of a unit cell while preventing the deterioration of a capacitance insulating film caused by hydrogen in a semiconductor device having the capacitance insulating film using a ferroelectric substance or a high dielectric.
The semiconductor device is provided with cell selecting transistors formed in a semiconductor substrate 10, a capacitor row containing a plurality of capacitors 27 respectively connected to the source diffusion layers 14B of the transistors and having capacitance insulating films 25 composed of a ferroelectric substance, and bit lines 17 formed lower than the capacitor row. The circumference of the capacitor row including the upside and downside of the row is covered with a hydrogen barrier film. The hydrogen barrier film is constituted of a lower conductive hydrogen barrier film 21 formed between the transistors and the capacitors 27, a lower insulating hydrogen barrier film 19 formed between the bit lines 17 and the capacitor row, and an upper hydrogen barrier film 29 formed above the capacitor row.
COPYRIGHT: (C)2005,JPO&NCIPI
Eiji Fujii
Kazuo Umeda
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