Title:
アンダーカットなしに導電線をエッチングする方法
Document Type and Number:
Japanese Patent JP3682067
Kind Code:
B2
Abstract:
Undercutting of conductive lines in a dense array bordered by an open field is avoided by reducing the severity of etching when the conductive material in the open field is substantially removed. In a preferred embodiment, the flow rate of chlorine gas is reduced during high density chlorine plasma etching of a conductive pattern when the conductive material is substantially removed from the open field.
Inventors:
Shen, Lewis
Application Number:
JP52095796A
Publication Date:
August 10, 2005
Filing Date:
November 03, 1995
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INCORPORATED
International Classes:
C23F4/00; H01L21/302; H01L21/3065; H01L21/3205; H01L21/3213; H01L23/52; (IPC1-7): H01L21/3065; H01L21/3213
Domestic Patent References:
| JP6132258A | ||||
| JP6163479A | ||||
| JP7094469A | ||||
| JP1220446A | ||||
| JP4125924A |
Foreign References:
| EP0082993A2 | ||||
| US5167762 | ||||
| US5207868 | ||||
| US5350488 |
Other References:
Teruo Suzuki and Hideo Kitagawa, Residue formation and elimination in chloride-based plasma etching of Al-Si-Cu interconnections, Journal of Vacuum Science and Technology B, 米国, American Vacuum Society, 1992年 4月,Vol.10,No.2 Mar/Apr 1992, 596-599
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yutaka Horii
Toshio Morita
Yutaka Horii