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Title:
プラズマ蒸着法並びに磁気バケットおよび同心プラズマおよび材料源を備える装置
Document Type and Number:
Japanese Patent JP3730867
Kind Code:
B2
Abstract:
Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from a magnetron sputtering target that is preferably annular. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy reactively coupled, preferably from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Chamber pressures are above 1 mTorr, typically in the 10-100 mTorr range, preferably between 10 and 20 mTorr. A magnetic bucket formed of an array of permanent magnets is positioned behind the inner surface of the chamber wall between the material source and the substrate. The bucket forms a multi-cusp field that operates as a magnetic mirror and functions in the IPVD system environment to repel charged particles moving from the plasma to the chamber wall, thereby increasing plasma confinement and improving the plasma density and uniformity and the ionization fraction of the coating material. The magnetic bucket preferably is formed of an array of ring shaped magnets spaced axially along the chamber wall. Alternatively, an array of axial extending bar magnets spaced circumferentially may be provided.

Inventors:
Bukovic, Mirko
Application Number:
JP2000599918A
Publication Date:
January 05, 2006
Filing Date:
February 02, 2000
Export Citation:
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Assignee:
東京エレクトロン株式会社
トーキョー エレクトロン アリゾナ インコーポレイテッド
International Classes:
C23C14/34; C23C14/35; H01L21/203
Domestic Patent References:
JP8016266A
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Toru Mori
Yutaka Yoshida