Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3749162
Kind Code:
B2
Abstract:
The present invention provides a manufacturing method of a semiconductor device, in which a main insulating film whose relative dielectric constant is drastically reduced can be formed on a barrier insulating film that covers wirings mainly consist of copper film. The configuration of the method is that film forming gas containing either siloxane or methylsilane, oxygen-containing gas, and etching gas, is transformed into plasma to cause reaction so as to form an insulating film 35b having low dielectric constant on a substrate 21 subject to deposition.
Inventors:
Kimi Shioya
Kazuo Maeda
Hiroshi Inokakura
Kazuo Maeda
Hiroshi Inokakura
Application Number:
JP2001371625A
Publication Date:
February 22, 2006
Filing Date:
December 05, 2001
Export Citation:
Assignee:
Canon Sales Co., Ltd.
Semiconductor Process Laboratory Co., Ltd.
Semiconductor Process Laboratory Co., Ltd.
International Classes:
H01L21/31; H01L21/316; C23C16/40; C23C16/505; H01L21/768; H01L23/522
Domestic Patent References:
| JP2003007699A | ||||
| JP2002513203A | ||||
| JP8321499A | ||||
| JP2001168193A |
Attorney, Agent or Firm:
Keizo Okamoto