Title:
光吸収層の形成方法
Document Type and Number:
Japanese Patent JP3811825
Kind Code:
B2
Abstract:
A method of forming a light-absorbing layer of CIGS for a solar cell by forming a precursor of Ib-IIIb group metals by sputtering and then by treating the precursor in a selenium atmosphere, wherein different kinds of metal element particles are sputtered from a pair of oppositely disposed targets and are well mixed to form a thin-film precursor, and a method of forming a light-absorbing layer for a compound semiconductor solar cell by forming a thin single-layered precursor of an alloy by simultaneously supplying Ib group and IIIb group metal elements and then by exposing the precursor to selenium gas. Both the methods can form a high-quality light-absorbing layer for a compound semiconductor solar cell at a high speed of treatment.
Inventors:
Shinsuke Takeuchi
Tomoyuki Kume
Takashi Komaru
Tomoyuki Kume
Takashi Komaru
Application Number:
JP2003511320A
Publication Date:
August 23, 2006
Filing Date:
June 10, 2002
Export Citation:
Assignee:
Honda motor industry stock company
International Classes:
H01L31/04; H01L31/032
Domestic Patent References:
| JP539562A | ||||
| JP5166726A | ||||
| JP5182911A | ||||
| JP200135861A | ||||
| JP3268335A | ||||
| JP200283824A |
Attorney, Agent or Firm:
Kiyoshi Torii