レジスト組成物

Japanese Patent JP3812569

B2

Resist composition comprises: (A) polymer based on a hydroxystyrene derivative monomer, a styrene derivative monomer and a (meth)acrylate monomer; (B) triphenyl-sulfonium benzene-sulfonate compound which forms an acid on irradiation of radiation; (C) an organic basic compound; and (D) a solvent. Resist composition comprises: (A) polymer based on a hydroxystyrene derivative monomer, a styrene derivative monomer and a (meth)acrylate monomer; (B) triphenyl-sulfonium benzene-sulfonate compound which forms an acid on irradiation of radiation; (C) an organic basic compound; and (D) a solvent. (A) comprises a monomer of formula (I), a monomer of formula (II) and a monomer of formula (III). (B) comprises a compound of formula (IV). [Image] [Image] R 1H or methyl group; R 2H or 1-4C optionally branched alkyl group; R 3an acid unstable group which easily dissociates using an acid and ester bonds with a carboxylic acid; R 5and R 7H or electron withdrawing group (both are not H); R 4, R 6and R 8H or halogen; R 9and R 10H, halogen, 1-4C optionally branched alkyl group, 1-4C optionally branched alkoxy group, 2-5C optionally branched alkoxycarbonyl group, or 4-5C cyclic acetal group; n : an integer of 1-3.

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Maezawa Noriaki
Fumiyoshi Urano

JP2003512785A

August 23, 2006

June 21, 2002

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Wako Pure Chemical Industries, Ltd.

G03F7/039; G03F7/004; H01L21/027

JP2000187330A
JP2000122296A
JP11305440A

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