Title:
薄膜型電子源、それを用いた表示装置及び応用機器
Document Type and Number:
Japanese Patent JP3826790
Kind Code:
B2
Abstract:
As the top electrode material of a thin-film electron emitter, a material having a bandgap wider than that of Si and electrical conductivity is used. In particular, a conductive oxide such as an SnO2 or ITO film and a wide-bandgap semiconductor such as GaN or SiC are employed.The electron energy loss in a top electrode through which hot electrons pass can be reduced so as to enhance the electron emission efficiency.A high emission current can be obtained in the case of the same diode current as a prior art. In addition, in the case of the same emission current density as a prior art, a small driving current is enough. A bus line and driving circuits can be simplified.
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Inventors:
Mutsumi Suzuki
Toshiaki Kusunoki
Masakazu Sagawa
Makoto Okai
Akitoshi Ishizaka
Toshiaki Kusunoki
Masakazu Sagawa
Makoto Okai
Akitoshi Ishizaka
Application Number:
JP2001500308A
Publication Date:
September 27, 2006
Filing Date:
May 28, 1999
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01J1/312; H01J9/02; H01J29/04; H01J31/12; H01J37/073; H01J37/317
Domestic Patent References:
| JP9320450A | ||||
| JP2715304B2 | ||||
| JP9320456A | ||||
| JP7057619A | ||||
| JP8115655A | ||||
| JP11162328A | ||||
| JP6283092A | ||||
| JP5617780B2 |
Attorney, Agent or Firm:
Manabu Inoue
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