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Title:
半導体構成部品、特に太陽電池、およびこれを製造する方法
Document Type and Number:
Japanese Patent JP3874429
Kind Code:
B2
Abstract:
A semiconductor component, having a semiconductor base material (40) of iron pyrites, is new. A semiconductor component has a single crystal or polycrystalline semiconductor base material (40) with p-type and n-type layers (52, 53), the base material comprising a purified FeS2 layer (51). An Independent claim is also included for production of the above semiconductor component, in which the base material comprises natural pyrites or a synthetic FeS2.

Inventors:
La Vecchia, Nunzio
Application Number:
JP54086599A
Publication Date:
January 31, 2007
Filing Date:
October 23, 1998
Export Citation:
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Assignee:
La Vecchia, Nunzio
International Classes:
H01L31/04; H01L21/363; H01L21/365; H01L21/368; H01L31/0288; H01L31/032; H01L31/18
Domestic Patent References:
JP61106499A
Other References:
O.Blenk et al., ”p-type conduction in pyrite single crystals prepared by chemical vapor transport”, Applied Physics Letters, No.62, Vol.27,26 April 1993, p.2093-209
I.J.Ferrer et al., ”Photoeletrochemical response and optical absorption of pyrite (FeS2) natural single crystal”, Solid State Communications, Vol.81, No.5, 1992, p.371-374
A.Ennaoui et al., ”Photoactive Synthetic Polycrystalline Pyrite (FeS2)”, Journal of Electrochemical Society, July 1985, p.1579-1582
A.Ennaoui et al., ”Ultra-Thin FeS2 Pyrite Layers in Sensitization Solar Cells”, 11th E.C. Photovoltaic Solar Energy Conference, 12-16 October 1992, p.935-938
A.Ennaoui et al., ”Iron disulfide for solar energy conversion”, Solar Energy Materials and Solar Cells, Vol.29, 1993, p.289-370
Attorney, Agent or Firm:
Masaki Yamakawa
Hiroro Kurokawa
Masayuki Konno
Osamu Nishiyama
Jiro Suzuki
Shigeki Yamakawa



 
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