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Patent Searching and Data


Title:
半導体装置
Document Type and Number:
Japanese Patent JP3992145
Kind Code:
B2
Abstract:

To provide a high integrated multi-port RAM which can perform simultaneous and parallel read / write from a plurality of ports practically.

The multi-port RAM is provided with a plurality of memory blocks (MB(i, J)) by the memory cell of a single port, the global bit lines (GBLa, GBLaB, GBLb and GBLbB) of multi-port constitution and a switch means (SW(i, j)) for selectively connecting a bit line inside the memory block to the global bit line. The global bit lines and the bit lines are provided in different wiring layers and the wiring pitch of the global bit lines is made larger than the wiring pitch of the bit lines.

COPYRIGHT: (C)2004,JPO


Inventors:
Yoshinobu Nakagome
Tachibana Dai
Application Number:
JP2003200842A
Publication Date:
October 17, 2007
Filing Date:
July 24, 2003
Export Citation:
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Assignee:
Renesas Technology Corp.
International Classes:
G11C11/41; G11C11/401; G11C11/4097; G11C11/413; H01L21/8244; H01L27/11
Domestic Patent References:
JP2143982A
JP5089679A
JP2009086A
Attorney, Agent or Firm:
Mitsumasa Tokuwaka