Title:
III族窒化物系化合物半導体素子の製造方法
Document Type and Number:
Japanese Patent JP3994623
Kind Code:
B2
Abstract:
A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor player is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110 % of a sputtering voltage.
Inventors:
Masanobu Senda
Jun Ito
Toshiaki Chiyo
Naoki Shibata
Asami Shizuyo
Jun Ito
Toshiaki Chiyo
Naoki Shibata
Asami Shizuyo
Application Number:
JP2000121692A
Publication Date:
October 24, 2007
Filing Date:
April 21, 2000
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
H01L21/203; C23C14/00; C23C14/06; C30B23/02; H01L33/06; H01L33/12; H01L33/32; H01S5/323; H01S5/343
Domestic Patent References:
| JP11092926A | ||||
| JP60173829A | ||||
| JP2001094150A |
Other References:
HEON LEE, MASAAKI YURI, TETSUZO UEDA, JAMES S. HARRIS,Growth of Thick GaN Films on RF Sputtered AlN Buffer Layer by Hydride Vapor Phase Epitaxy,Journal of Electronic Materials,1997年,Vol.26, No.8,p.898-902
Attorney, Agent or Firm:
Tomimasa Konishi
Mikiharu Hagino
Mikiharu Hagino