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Title:
不揮発性半導体メモリ装置
Document Type and Number:
Japanese Patent JP3998447
Kind Code:
B2
Abstract:
A nonvolatile memory device comprises a plate line driving circuit having a hierarchical word line structure. The plate line driving circuit is coupled to plate lines corresponding to a main word line. The plate line driving circuit transmits a plate line drive signal to the plate lines when the main word line is selected, and connects the plate lines to the main word line when the main word line is unselected. Therefore, a floating condition in the plate lines when the main word line is unselected can be prevented.

Inventors:
Cui Moon Kei
Takichi Yoshida
Application Number:
JP2001311653A
Publication Date:
October 24, 2007
Filing Date:
October 09, 2001
Export Citation:
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Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G11C11/22; G11C16/00
Domestic Patent References:
JP10340588A
JP10112190A
Attorney, Agent or Firm:
Makoto Hagiwara



 
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