Title:
半導体ウェハの製造方法
Document Type and Number:
Japanese Patent JP3998677
Kind Code:
B2
Abstract:
A method for manufacturing a hybrid semiconductor wafer having a BOX film, includes: depositing a first masking film on a silicon based substrate; depositing a second masking film on the first masking film; forming a window portion having a perpendicular sidewall by selectively removing a part of the second masking film; removing a part of the first masking film selectively; implanting oxidizing species into the substrate through the window portion; removing the second masking film; and forming a BOX film in the substrate, and forming a thermal oxide film in the substrate.
Inventors:
Keishi Yamada
Application Number:
JP2004304555A
Publication Date:
October 31, 2007
Filing Date:
October 19, 2004
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/02; H01L21/76; H01L21/265; H01L27/12
Domestic Patent References:
| JP2079445A | ||||
| JP63033846A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu