Title:
窒化硅素(Si3N4)ナノロッドとその製造方法
Document Type and Number:
Japanese Patent JP4000371
Kind Code:
B2
Inventors:
Yoshio Bando
Gao Ioha
Gao Ioha
Application Number:
JP2003021044A
Publication Date:
October 31, 2007
Filing Date:
January 29, 2003
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
C01B21/068
Domestic Patent References:
| JP11509825A | ||||
| JP61295298A |
Foreign References:
| US3413090 | ||||
| CN1164582A |