Title:
固体撮像素子の製造方法
Document Type and Number:
Japanese Patent JP4004484
Kind Code:
B2
Abstract:
A solid-state image sensor in which a plurality of unit pixel portions, each including a light receiving area which generates electric charges by light irradiation and a transistor which outputs an electric signal in accordance with the light receiving area, are arranged in a two-dimensional array, in which: each of the unit pixel portions includes a first conductive type well region provided on a second conductive type semiconductor layer in a first conductive type substrate, a part of the first conductive type well region and a second conductive type semiconductor layer region laminated on a part of the first conductive type well region form the light receiving area; electric charge storage area for storing electric charges generated in the light receiving area is provided in the first conductive type well region to read out an electric signal in accordance with an amount of electric charges stored in the electric charge storage area from the transistor; and the second conductive type semiconductor layer region has a maximum impurity concentration portion in the depth direction of the first conductive type substrate is at a surface of the first conductive type substrate.
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Inventors:
Hiroshi Iwata
Application Number:
JP2004107904A
Publication Date:
November 07, 2007
Filing Date:
March 31, 2004
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L27/146; H01L31/10; H04N5/335; H04N5/357; H04N5/369; H04N5/374
Domestic Patent References:
| JP2001223351A | ||||
| JP9298308A | ||||
| JP57133684A | ||||
| JP7030091A |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio