Title:
薄膜形成方法
Document Type and Number:
Japanese Patent JP4008664
Kind Code:
B2
Abstract:
In a thin film forming method of the invention, an atmosphere for a base as a thin film forming target is set to a high vacuum of, e.g., 0.01 Torr or less, and a gas of an organometallic compound and an oxidizing gas are introduced onto a base surface heated to about 450 DEG C, to form a plurality of crystal nuclei, made of an oxide of a metal constituting the organometallic compound, on the base surface. The atmosphere for the base is then set to a lower vacuum than the first vacuum degree, and the gas of the organometallic compound and the oxidizing gas are subsequently introduced onto the base surface heated to about 450 DEG C, to form a film made of the oxide of the metal there. In the above process, in the first step, the vacuum degree is set to a vacuum degree at which the oxide of the metal is formed by crystal growth on surfaces of different materials at the first temperature, and the plurality of crystal nuclei are formed at a high density so that a crystal grain which is formed by growing a crystal nucleus comes into contact with a crystal grain growing from an adjacent crystal nucleus. In the subsequent step, the temperature for the base is set to less than a temperature at which the oxide of the metal is formed by crystal growth on the surfaces of the different materials.
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Inventors:
Liu Army
Shinriki Expo
True pattern respect
Shinriki Expo
True pattern respect
Application Number:
JP2000588798A
Publication Date:
November 14, 2007
Filing Date:
December 13, 1999
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/316; C23C16/40; H01L21/02; H01L21/314
Domestic Patent References:
| JP10182291A | ||||
| JP9186376A | ||||
| JP2000169297A | ||||
| JP8161933A |
Attorney, Agent or Firm:
Masaki Yamakawa
Hiroro Kurokawa
Masayuki Konno
Osamu Nishiyama
Shigeki Yamakawa
Hiroro Kurokawa
Masayuki Konno
Osamu Nishiyama
Shigeki Yamakawa