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Title:
フラックスのフラッシング改善のためにハウジング缶とダイとの間の間隔を大きくした高電圧半導体デバイスのハウジング
Document Type and Number:
Japanese Patent JP4012501
Kind Code:
B2
Abstract:
A semiconductor device is shown and described which includes a metal can that receives a semiconductor die in an interior thereof. The metal can has a recess formed on a top portion thereof. The recess provides rigidity to the top portion of the metal can which allows the wall of the can to be spaced farther apart from the die, thereby providing a much larger open channel which allows for the easier cleaning of flux residue after soldering.

Inventors:
Martin standing
Application Number:
JP2003506000A
Publication Date:
November 21, 2007
Filing Date:
June 14, 2002
Export Citation:
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Assignee:
INTERNATIONAL RECTIFIER CORPORATION
International Classes:
H01L23/48; H01L23/04; H01L23/492; H01L23/50
Domestic Patent References:
JP5636162U
JP4534209B1
JP2001313359A
JP951059A
JP200243779A
JP2002176129A
JP2180043A
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe