Title:
基板処理方法及び基板処理装置
Document Type and Number:
Japanese Patent JP4014127
Kind Code:
B2
Abstract:
Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.
Inventors:
Takayuki Toshima
Naoki Shindo
Tadashi Iino
Naoki Shindo
Tadashi Iino
Application Number:
JP2001041482A
Publication Date:
November 28, 2007
Filing Date:
February 19, 2001
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
G03F7/42; H01L21/304; B08B5/00; H01L21/00; H01L21/027; H01L21/302; H01L21/3065; H01L21/311
Domestic Patent References:
| JP5109686A | ||||
| JP2000100686A |
Attorney, Agent or Firm:
Kikuhiko Nakamoto