Title:
半導体装置の製造方法および半導体装置
Document Type and Number:
Japanese Patent JP4019377
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device includes an origin part forming process in order to form a plurality of origin parts, each of which serves as an origin for crystallization of a semiconductor film on a substrate, a semiconductor film forming process to form the semiconductor film on the substrate where the origin parts have been formed, and a thermal treatment process in which the semiconductor film is thermally treated in order to form a plurality of nearly single crystalline grains, each of which is almost centered at each of the plurality of origin parts. The method further includes a patterning process to carry out patterning the semiconductor film in order to form a transistor region and an element forming process to form a gate insulation film and a gate electrode on the transistor region so as to form a thin film transistor, wherein the origin parts are formed in such a manner that the nearly single crystalline grains are included in the source region and drain region of the patterning process.
Inventors:
Hiroshima cheap
Application Number:
JP2004109087A
Publication Date:
December 12, 2007
Filing Date:
April 01, 2004
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP7283415A | ||||
| JP2003282438A |
Attorney, Agent or Firm:
Yoshiyuki Inaba
Katsuro Tanaka
Shinji Oga
Katsuro Tanaka
Shinji Oga