光半導体装置の製造方法 - 富士通株式会社

Title:

光半導体装置の製造方法

Document Type and Number:

Japanese Patent JP4022794

Kind Code:

B2

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Inventors:

Mitsuru Egawa

Application Number:

JP1943899A

Publication Date:

December 19, 2007

Filing Date:

January 28, 1999

Export Citation:

Assignee:

富士通株式会社

International Classes:

H01S5/12; H01L33/06; H01L33/30; H01S5/00

Domestic Patent References:

Attorney, Agent or Firm:

Shoji Kashiwaya
Koichi Watanabe
Manabe Kiyoshi

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