Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4034197
Kind Code:
B2
Abstract:
A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of the deposited dielectric layer. After placing a substrate in a chamber, a gas having a thermal conductivity of 0.1 W/mK or greater (e.g., H2 or He) is introduced into the chamber, thereby contacting the gas with the substrate for stabilization of a temperature of the substrate. A desired dielectric layer is deposited on or over the substrate in the chamber using a PECVD method after the step of introducing the gas. As the desired dielectric layer, a dielectric layer having a low dielectric constant, such as a SiCH, SiCHN, or SiOCH layer, is preferably used.
Inventors:
Morita Noboru
Tatsuya Usami
Ooto Hikari City
Sadayuki Onishi
Koji Arita
Ryohei Kitao
Yoichi Sasaki
Tatsuya Usami
Ooto Hikari City
Sadayuki Onishi
Koji Arita
Ryohei Kitao
Yoichi Sasaki
Application Number:
JP2003024719A
Publication Date:
January 16, 2008
Filing Date:
January 31, 2003
Export Citation:
Assignee:
NEC Electronics Corporation
International Classes:
H01L21/768; C23C16/32; C23C16/36; C23C16/40; C23C16/46; H01L21/312; H01L21/314; H01L21/316; H01L23/522
Domestic Patent References:
| JP2004235637A |
Attorney, Agent or Firm:
Mitsuhiro Hamada