Title:
洗浄並びにエッチング方法とその装置
Document Type and Number:
Japanese Patent JP4036751
Kind Code:
B2
Abstract:
A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2 formed on the silicon pieces can be removed, and XeF2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.
Inventors:
Tokiko Kanayama
Hiroaki Kono
Hiroaki Kono
Application Number:
JP2002551893A
Publication Date:
January 23, 2008
Filing Date:
December 17, 2001
Export Citation:
Assignee:
Sumitomo Precision Products Co., Ltd.
International Classes:
H01L21/304; B01D11/04; B08B5/00; C03C23/00; C10G21/18; C23F1/00; C23G1/00; G01L21/30; G01R31/00; H01L21/02; H01L21/306; H01L21/3065
Domestic Patent References:
| JP7122539A | ||||
| JP4096222A | ||||
| JP10209088A | ||||
| JP10317169A |
Attorney, Agent or Firm:
Satoshi Murakami