To join a conductor plate to a mating member electrically and mechanically stably at room temperature in a short time after replacing an inner wiring member forming a main circuit with a conductive plate.

In the assembly structure of the power semiconductor device, after at least one or more insulating substrates 2 are mounted on a metallic base plate 1 combined with an envelope 6 and an IGBT (insulated gate bipolar transistor, power semiconductor chip) 3 is mounted on a circuit pattern 2a formed on the insulating substrate, inner wiring is carried out among the IGBT 3, the circuit pattern 2a of the insulating substrate and an external connection terminal 11 mutually. The conductor plate of the external connection terminal 11 is directly joined to a surface electrode (emitter electrode) of the IGBT 3 and the circuit pattern of the insulating substrate by a direct metallic junction method such as ultrasonic junction, thermocompression or the like and is extracted.

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