Title:
電子デバイスの製造方法
Document Type and Number:
Japanese Patent JP4044137
Kind Code:
B2
Abstract:
A method of manufacturing a large-area electronic device such as a flat panel display, which method includes subjecting a semiconductor film on a polymer substrate to an energy beam treatment, e.g., for crystal growth or to anneal an ion implant, and masking the substrate prior to treatment to prevent exposure to the energy beam, wherein the adhesion of the film and other layers on the substrate is improved by first heating the substrate to pre-shrink it, and then depositing the layers on the pre-shrunk substrate at a lower temperature than the heating temperature.
Inventors:
Young Nigel David
Application Number:
JP51643297A
Publication Date:
February 06, 2008
Filing Date:
October 18, 1996
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
International Classes:
H01L29/786; H01L21/20; H01L21/336; H01L21/77; H01L21/84; G02F1/1333
Domestic Patent References:
JP2072670A | ||||
JP6168943A | ||||
JP3041721A |
Foreign References:
US4514583 |
Attorney, Agent or Firm:
Kenji Sugimura
Yoshiyuki Iwasa
Kosaku Sugimura
Norita Tomita
Junko Sugimura
Hiroshi Tokunaga
Kazuaki Takami
Umemoto Masao
Yoshiyuki Iwasa
Kosaku Sugimura
Norita Tomita
Junko Sugimura
Hiroshi Tokunaga
Kazuaki Takami
Umemoto Masao