Title:
半導体記憶装置
Document Type and Number:
Japanese Patent JP4047003
Kind Code:
B2
Abstract:
To provide a nonvolatile semiconductor memory which can hold data even while power is not supplied.
A flash/EEPROM memory cell having the same structure as a memory cell M1 is used as a memory cell RM1 for reference.
COPYRIGHT: (C)2003,JPO
Inventors:
Toshio Hibiki
Application Number:
JP2001399069A
Publication Date:
February 13, 2008
Filing Date:
December 28, 2001
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G11C16/06; G11C16/02; G11C16/04; H01L21/8247; H01L27/10; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP4289593A | ||||
| JP9022600A |
Attorney, Agent or Firm:
Kazuhide Okada