無機多層レジストのイオンビーム微細加工方法及びこの方法による半導体デバイス、量子デバイス、マイクロマシーンコンポーネント及び微細構造体

Title:

Document Type and Number:

Japanese Patent JP4052430

Kind Code:

B2

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Inventors:

Tadaaki Kaneko
Yasushi Asaoka
Naoshi Sano

Application Number:

JP2001377084A

Publication Date:

February 27, 2008

Filing Date:

December 11, 2001

Export Citation:

Assignee:

New Industry Creation Research Institute

International Classes:

B81C1/00; H01L21/3065; H01L21/302

Domestic Patent References:

Attorney, Agent or Firm:

Yoshiyuki Kaji
Makoto Suhara

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