Title:
半導体記憶装置の内部電源供給回路及び半導体記憶装置の内部電源供給方法
Document Type and Number:
Japanese Patent JP4053718
Kind Code:
B2
Abstract:
A power supply circuit for supplying a semiconductor memory device with power to perform refreshing. The power supply circuit is connected to an external power supply. The power supply circuit includes a first power supply circuit, which generates a step down voltage by decreasing a first voltage on the external power supply in a normal operation mode, a second power supply circuit, which supplies the internal circuit with a second voltage on the external power supply in a self-refresh mode, and a detection circuit, which detects entry to the self-refresh mode and a voltage level of the external power supply and generates a detection signal based on the detection. During the self-refresh mode, the first power supply circuit receives the second voltage from the external power supply, and the first and second power supply circuits supply the internal circuit with the second voltage based on the detection signal.
Inventors:
Yoshiharu Kato
Isamu Kobayashi
Isamu Kobayashi
Application Number:
JP2000271819A
Publication Date:
February 27, 2008
Filing Date:
September 07, 2000
Export Citation:
Assignee:
富士通株式会社
International Classes:
G11C11/407; G11C11/4074; G11C5/14; G11C11/403; H01L27/092; H01L27/108
Domestic Patent References:
| JP11086544A | ||||
| JP10027026A |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda