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Title:
処理装置及び処理方法
Document Type and Number:
Japanese Patent JP4057198
Kind Code:
B2
Abstract:
The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28. Additionally, the apparatus includes a low-temperature processing chamber 207 allowing NF3 gas to react with the native oxide film at a low temperature and a heating chamber 209 for heating the product film, independently.

Inventors:
Yasuo Kobayashi
Yoshioka Masao
Application Number:
JP22933899A
Publication Date:
March 05, 2008
Filing Date:
August 13, 1999
Export Citation:
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Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/302; H01L21/3065; C23C16/00; H01J37/32; H01L21/00; H01L21/306; H01L21/311; H05H1/46
Domestic Patent References:
JP10335316A
JP4032230A
JP8186081A
JP6349791A
JP2256235A
JP2000208498A
Attorney, Agent or Firm:
Kazuo Sato
Hiroyuki Nagai
Junpei Okada
Shigeru Takebayashi