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Title:
測色の向上したカラー画像センサ及びその製造方法
Document Type and Number:
Japanese Patent JP4064347
Kind Code:
B2
Abstract:
The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer ( 10 ), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones ( 12 ) covered with conductive and insulating layers ( 14, 16 ) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer ( 10 ) by its front face against the front face of a supporting substrate ( 20 ), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer ( 30 ) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters ( 18 ) on the semiconductive layer thus thinned.

Inventors:
Purquier, Eric
Briso, Louis
Simon, Jill
Jutin, Alan
Romvoe, philip
Application Number:
JP2003523014A
Publication Date:
March 19, 2008
Filing Date:
August 30, 2002
Export Citation:
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Assignee:
E2V Semiconductors
International Classes:
H01L27/146; H01L27/14; H01L31/0216
Domestic Patent References:
JP9045886A
JP55038024A
JP5218374A
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori