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Title:
センサ素子
Document Type and Number:
Japanese Patent JP4065338
Kind Code:
B2
Abstract:
A sensor array includes includes multiple sensor elements that each have a collection electrode in contact with a photosensitive layer. The photosensitive layer is configured to produce a detectable response at the collection electrode upon incidence of radiation in a responsive zone of the photosensitive layer. A gate electrode layer is separated from the photosensitive layer by a dielectric layer, with adjustments to voltage applied to the gate electrode layer inducing changes in areal extent of the responsive zone of the photosensitive layer. Changing the size of the responsive zone permits performance of image convolutions for edge detection, data compression, or other Gaussian convolutions by the sensor array, rather than by post-detection electronics.

Inventors:
Warren Bee Jackson
David Kay Biegersen
Application Number:
JP13541896A
Publication Date:
March 26, 2008
Filing Date:
May 29, 1996
Export Citation:
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Assignee:
XEROX CORPORATION
International Classes:
G01T1/24; H01L27/146; H01L31/09; H01L31/10
Domestic Patent References:
JP4299579A
JP63147361A
JP5283664A
JP5335605A
Other References:
M.Hayama,"Characteristics of p-i Junction Amorphous Silicon Stripe-Type Photodiode Array and its Application to Contact Image Sensor",IEEE Transactions on Electron Devices, VOl.37, No.5, May 1990, p.1271-1279
R.A.Street et al.,"Amorphous Silicon Arrays Develop a Medical Image",IEEE Circuits and Devices Magazine, Vol.9, No.4, p.38-42
Attorney, Agent or Firm:
Masu Kobori