Title:
半導体レーザ素子、光半導体素子およびその製造方法
Document Type and Number:
Japanese Patent JP4068535
Kind Code:
B2
Inventors:
Rei Hashimoto
Mitsuhiro Kushibe
Kei Oka
Ezaki Rui Sen
Mitsuhiro Kushibe
Kei Oka
Ezaki Rui Sen
Application Number:
JP2003303135A
Publication Date:
March 26, 2008
Filing Date:
August 27, 2003
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/205; H01S5/323
Domestic Patent References:
| JP2003101152A | ||||
| JP2001168463A | ||||
| JP2000307195A | ||||
| JP10064828A | ||||
| JP11238685A |
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki