To provide the structure of a photoelectric conversion device in which damage to a semiconductor layer is lessened in a manufacturing method and limits on an electrode material and a method for manufacturing an electrode structure are small, and to provide its manufacturing method.
In the photoelectric conversion device, two electrodes laid in layers through an insulating film are manufactured previously, and a semiconductor layer is formed after the electrodes are manufactured and shaped. The electrode structure comprises a first electrode, an insulating film laid in layer on a first electrode, a second electrode laid in layer on the insulating film and not touching the first electrode directly, and a semiconductor layer touching both the first and second electrodes.
COPYRIGHT: (C)2004,JPO
Nobuyuki Matsumoto
| JP2001044463A |
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai