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Title:
SiGeC半導体結晶及びその製造方法
Document Type and Number:
Japanese Patent JP4077629
Kind Code:
B2
Abstract:
A B-doped Si1-x-yGexCy layer 102 (where 0

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Inventors:
Tetsu Saitoh
Yoshihiko Kanzawa
Katsuya Nozawa
Minoru Kubo
Application Number:
JP2001571476A
Publication Date:
April 16, 2008
Filing Date:
March 27, 2001
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L29/161; C23C16/42; C30B25/02; H01L21/205; H01L21/324; H01L21/338; H01L29/812
Domestic Patent References:
JP5102177A
JP11312686A
Foreign References:
WO2000016391A1
Other References:
International Electron Devices Meeting Technical Digest,1996年12月 8日,pp.249-252
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama



 
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