Title:
半導体装置および内部温度測定方法
Document Type and Number:
Japanese Patent JP4086613
Kind Code:
B2
Abstract:
A temperature measuring sensor is incorporated in a substrate of a semiconductor device and has a diode, and resistor formed in the substrate and connected in series. When a first forward constant current is supplied to the diode through the resistor, a potential difference VA1 is produced between terminal ends of both the diode and the resistor, and a potential difference VF1 is produced between terminal ends of the diode. When a second forward constant current is supplied to the diode through the resistor, a potential difference VA2 is produced between the terminal ends of both the diode and the resistor, and a potential difference VF2 is produced between the terminal ends of the diode. A real temperature T of the substrate is calculated by the following formula: T=(q/k)(VF1-VF2)[1/[ln((VA1-VF1)/(VA2-VF2))]] herein: T is an absolute temperature, k is Boltzmann's constant, and q is an electron charge.
Inventors:
Nobue Tanaka
Application Number:
JP2002295507A
Publication Date:
May 14, 2008
Filing Date:
October 09, 2002
Export Citation:
Assignee:
NEC Electronics Corporation
International Classes:
H01L21/822; G01K7/01; H01L21/66; H01L27/04
Domestic Patent References:
| JP63128276A | ||||
| JP2001298160A | ||||
| JP4225250A | ||||
| JP1241157A | ||||
| JP2001508216A |
Attorney, Agent or Firm:
Mitsuhiro Hamada