Title:
MOCVDによるヘテロ金属酸化物の成長用前駆体
Document Type and Number:
Japanese Patent JP4087065
Kind Code:
B2
Abstract:
Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula Sr[M(OR1)6-xLx]2 wherein x is form 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group.
Inventors:
Reedham Timothy John
Light peter john
Crosby Michael John
Jones Anthony Copeland
Light peter john
Crosby Michael John
Jones Anthony Copeland
Application Number:
JP2000557258A
Publication Date:
May 14, 2008
Filing Date:
June 29, 1999
Export Citation:
Assignee:
QINETIQ LIMITED
International Classes:
C07C217/06; C07C31/28; C07F7/00; C07F9/00; C23C16/40; C23C18/12; H01L21/316; H01L21/314
Domestic Patent References:
JP10158016A | ||||
JP10298760A |
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda