Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MOCVDによるヘテロ金属酸化物の成長用前駆体
Document Type and Number:
Japanese Patent JP4087065
Kind Code:
B2
Abstract:
Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula Sr[M(OR1)6-xLx]2 wherein x is form 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group.

Inventors:
Reedham Timothy John
Light peter john
Crosby Michael John
Jones Anthony Copeland
Application Number:
JP2000557258A
Publication Date:
May 14, 2008
Filing Date:
June 29, 1999
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
QINETIQ LIMITED
International Classes:
C07C217/06; C07C31/28; C07F7/00; C07F9/00; C23C16/40; C23C18/12; H01L21/316; H01L21/314
Domestic Patent References:
JP10158016A
JP10298760A
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda