Title:
パワーICデバイス及びその製造方法
Document Type and Number:
Japanese Patent JP4087416
Kind Code:
B2
Abstract:
In a power IC device, a surface layer channel CMOS transistor and a trench power MOS transistor are formed on the same chip. In one embodiment, a source region of the trench power MOS transistor is arranged at the same level as a gate electrode of the surface layer channel CMOS transistor. Thus, the power IC device and a method for manufacturing the power IC device are provided for reducing manufacturing cost in the case of forming the trench power MOS transistor and the surface layer channel CMOS transistor on the same chip.
Inventors:
Albert O. Adan
Mitsuhiro Kikuta
Mitsuhiro Kikuta
Application Number:
JP2006105700A
Publication Date:
May 21, 2008
Filing Date:
April 06, 2006
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L27/088; H01L21/336; H01L21/8234; H01L29/78
Domestic Patent References:
| JP49073982A | ||||
| JP9129868A | ||||
| JP10093086A | ||||
| JP7078986A |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office