Title:
堆積チャンバ及び低誘電性膜のための方法
Document Type and Number:
Japanese Patent JP4087923
Kind Code:
B2
Abstract:
A method for depositing a film onto a substrate within a deposition chamber is provided comprising the steps of injecting a first process gas into the chamber at a plurality of positions surrounding a substrate within the chamber, injecting a second process gas into the chamber at a first region spaced apart from and located generally centrally above the substrate, and injecting a third process gas, preferably an oxygen-supplying gas, into the chamber at second region spaced apart from and located generally centrally above said substrate. An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in a uniform film having a uniformly low (under 3.4) dielectric constant across the film.
Inventors:
Lysian
One Yashin
Redeker Fred Sea.
Tetsuya Ishikawa
Collins Alain W.
One Yashin
Redeker Fred Sea.
Tetsuya Ishikawa
Collins Alain W.
Application Number:
JP15277197A
Publication Date:
May 21, 2008
Filing Date:
May 07, 1997
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/44; C23C16/40; H01L21/31; C23C16/455
Domestic Patent References:
| JP8017748A | ||||
| JP7111248A | ||||
| JP2126632A | ||||
| JP7161642A | ||||
| JP7254592A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Ikeda adult
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Okimoto Kazuaki
Ikeda adult
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Okimoto Kazuaki